Power electronic switching device, arrangement herewith and methods for producing the switching device

ABSTRACT

A switching device has a substrate, a connection device and a pressure device, wherein the substrate has electrically insulated conductor tracks, and a power semiconductor component is on one of the conductor tracks with a first main surface and is conductively connected thereto. The connection device is a film composite with conductive film and an insulating film and forms a first and a second main surface. The switching device is connected by the connection device and a contact area of the second main surface of the power semiconductor component is connected to a first contact area of the first main surface of the connection device in a force-locking and electrically conductive manner with a pressure body and a pressure element projecting toward the power semiconductor component.

CROSS REFERENCE TO RELATED APPLICATIONS

This application relates to, and claims priority from, DE Ser. No. 102016 113 536.4 filed Jul. 22, 2016, the entire contents of which areincorporated herein by reference.

FIGURE SELECTED FOR PUBLICATION

FIG. 3

BACKGROUND OF THE INVENTION Field of the Invention

The invention describes a power electronic switching device which canform a basic cell of a power semiconductor module or of a powerelectronic system by itself or in combination with further, preferablyidentical, basic cells it forms the power electronic basic buildingblock of the power semiconductor module or of the power electronicsystem. Furthermore, the invention describes an arrangement for a powerelectronic switching device and a method for producing a particularlypreferred embodiment of such a power electronic switching device.

Description of the Related Art

The prior art, for example disclosed in DE 10 2013 104 949 B3 disclosesa switching device comprising a substrate, a power semiconductorcomponent, a connection device, load terminal devices and a pressuredevice. In this case, the substrate has electrically insulated conductortracks, wherein a power semiconductor component is arranged on aconductor track. The connection device is embodied as a film compositecomprising an electrically conductive film and an electricallyinsulating film and has a first and a second main surface. The switchingdevice is thereby connected in a circuit-conforming manner internally.The pressure device has a pressure body having a first cutout,projecting from which a pressure element is arranged, wherein thepressure element presses onto a section of the second main surface ofthe film composite and in this case said section is arranged within thearea of the power semiconductor component in projection along thedirection of the normal to the power semiconductor component.

ASPECTS AND SUMMARY OF THE INVENTION

With knowledge of the conditions mentioned, the invention is based onthe object of presenting a power electronic switching device and anarrangement therewith and a method for producing the switching device,wherein the switching device is optimized with regard to its complexityand its production outlay.

This object is achieved according to the invention by means of a powerelectronic switching device by means of an arrangement comprising apower electronic switching device and a production method therefore.

The switching device according to the invention is embodied comprising asubstrate, comprising a connection device and comprising a pressuredevice, wherein the substrate has conductor tracks electricallyinsulated from one another, and a power semiconductor component isarranged on one of the conductor tracks with its first main surface andis electrically conductively connected thereto, wherein the connectiondevice is embodied as a film composite comprising an electricallyconductive film and an electrically insulating film and thus forms afirst and a second main surface, wherein the switching device isconnected in a circuit-conforming manner internally by means of theconnection device in this case and a contact area of the second mainsurface of the power semiconductor component is connected to a firstcontact area of the first main surface of the connection device in aforce-locking and electrically conductive manner, for this purpose thepressure device has a pressure body and a pressure element projectingtherefrom in the direction of the power semiconductor component, whereinthe pressure element presses on a first section of the second minsurface of the film composite and in this case said first section isarranged completely within the area of the power semiconductor componentin projection along the direction of the normal to the powersemiconductor component.

In the case of this switching device, therefore, a cohesive connectionof the contact area of the second main surface of the powersemiconductor component to the first contact area of the first mainsurface of the connection device is explicitly dispensed with. As aresult, in comparison with the prior art, a cohesive connection, whichis complex to produce and is preferably embodied as a pressure sinteringconnection, is replaced by a force-locking connection. This deliberatelyaccepts the situation if the contact area available for currentconduction, that is to say the functionally effective contact area, ofthe connection between the power semiconductor component and theconnection device has a smaller surface area than the terminal area ofthe power semiconductor component. The terminal area in this casecorresponds to the metallization, that is to say to the load terminalarea of the power semiconductor component.

It is preferred if a second contact area of the connection device isconnected to a contact area of the conductor tracks of the substratethat are assigned thereto in a force-locking or cohesive andelectrically conductive manner.

Likewise, the power semiconductor component can be electricallyconductively connected by its first main surface to the conductor trackassigned to it in a force-locking or cohesive manner.

It is preferred in this case if the respective cohesive connection isembodied as a soldering, adhesive or, in particular, pressure sinteringconnection that is routine in the art.

It is particularly preferred if the pressure body has a first cutout,from which the pressure element projects. In this case, it isfurthermore advantageous if said first cutout of the pressure body isembodied as a depression proceeding from a first main surface, in thiscase the pressure element completely or approximately completely fillssaid cutout of the pressure body, and the pressure element projects fromthe cutout of the pressure body at the first main surface thereof in thedirection of the connection device, more precisely the second mainsurface thereof. In this case, the ratio of lateral extent to verticalextent of the pressure body should have a ratio of more than 2 to 1, inparticular of more than 4 to 1.

Preferably, the surface area of the first section of the second mainsurface of the film composite has at least 20%, in particular at least50%, of the area of the assigned power semiconductor component. In thiscase, area of the power semiconductor component is understood to meanthe entire areal extent thereof, that is to say not just that of theterminal or contact areas.

The arrangement is embodied according to the invention comprising anabove-described electronic switching device, comprising a cooling deviceand comprising a pressure introducing device, wherein this pressureintroducing device is supported indirectly or directly against thecooling device and introduces pressure preferably centrally on thepressure device, and the switching device is thereby connected to thecooling device in a force-locking manner.

Likewise, on account of the particularly effective introduction ofpressure it is possible that a heat-conducting layer, in particular athermally conductive paste, having a thickness of less than 20 μm, inparticular of less than 10 μm, in particular of less than 5 μm, can bearranged between the substrate, in particular that part of the substrateon which the power semiconductor components are arranged, and thecooling device.

It may likewise be preferred if the cooling device is a preferablymetallic baseplate of a power semiconductor module or a heat sink.

The method according to the invention for producing a particularlypreferred embodiment of an abovementioned power electronic switchingdevice comprises the following steps, preferably to be applied in thisorder:

-   -   A. providing the substrate comprising an insulation layer and        comprising conductor tracks electrically insulated from one        another wherein, on one of these conductor tracks, a power        semiconductor component is arranged and is connected to this        conductor track in a cohesive manner;    -   B. providing the connection device embodied as a film stack        embodied alternately with two electrically conductive,        inherently structured films and an electrically insulating film        between the two conductive films;    -   C. arranging an adhesive substance on the substrate or on, the        connection device at adhesive sections which thus arise and are        characterized in that they do not serve for electrically        conductive connection between the connection partners, that is        to say the connection device and the substrate;

D. arranging and adhesively connecting the connect-ion device to thesubstrate by means of the adhesive substance;

E. introducing pressure on the connection device by means of a pressuredevice and a pressure introducing device in such a way that aforce-locking electrically conductive connection is formed between theconnection device and the assigned power semiconductor component.

Advantageously, a force-locking electrically conductive connection isadditionally also formed between the connection device and the conductortrack assigned thereto.

It goes without saying that, unless excluded per se, the featuresmentioned in the singular, in particular the power semiconductorcomponent, can be present multiply in the respective power electronicswitching device or the arrangement therewith.

It goes without saying that the different configurations of theinvention can be realized individually or in arbitrary combinations inorder to achieve improvements. In particular, the features mentioned andexplained above and hereinafter, irrespective of whether they arementioned in the context of the power electronic switching device, thearrangement or the method, can be used not only in the combinationsindicated, but also in other combinations, or by themselves, withoutdeparting from the scope of the present invention.

The above and other aspects, features and advantages of the presentinvention will become apparent from the following description read inconjunction with the accompanying drawings, in which like referencenumerals designate the same elements.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows, in an exploded illustration, an arrangement according tothe invention comprising a power electronic switching device accordingto the invention.

FIGS. 2 to 4 show different configurations of power electronic switchingdevices according to the invention.

FIGS. 5A, 5B, 5C, and 5D show a plan view of a power electronicswitching device in different sectional planes.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to embodiments of the invention.Wherever possible, same or similar reference numerals are used in thedrawings and the description to refer to the same or like parts orsteps. The drawings are in simplified form and are not to precise scale.The word ‘couple’ and similar terms do not necessarily denote direct andimmediate connections, but also include connections through intermediateelements or devices. For purposes of convenience and clarity only,directional (up/down, etc.) or motional (forward/back, etc.) terms maybe used with respect to the drawings. These and similar directionalterms should not be construed to limit the scope in any manner. It willalso be understood that other embodiments may be utilized withoutdeparting from the scope of the present invention, and that the detaileddescription is not to be taken in a limiting sense, and that elementsmay be differently positioned, or otherwise noted as in the appendedclaims without requirements of the written description being requiredthereto.

Various operations may be described as multiple discrete operations inturn, in a manner that may be helpful in understanding embodiments ofthe present invention; however, the order of description should not beconstrued to imply that these operations are order dependent.

Although only a few embodiments have been disclosed in detail above,other embodiments are possible and the inventors intend these to beencompassed within this specification. The specification describescertain technological solutions to solve the technical problems that aredescribed expressly and inherently in this application. This disclosuredescribes embodiments, and the claims are intended to cover anymodification or alternative or generalization of these embodiments whichmight be predictable to a person having ordinary skill in the art.

FIG. 1 shows, in a schematic exploded illustration, a firstconfiguration of a power electronic switching device 1 according to theinvention. The illustration shows a substrate 2 embodied in a routinemanner in the art, in principle, and comprising an insulating substancebody 20 and conductor tracks 22 arranged thereon and respectivelyelectrically insulated from one another, said conductor tracks havingdifferent potentials, in particular load potentials, but also auxiliary,in particular switching and measurement, potentials, of the switchingdevice. Three conductor tracks 22 having load potentials such as aretypical of a half-bridge topology are specifically illustrated here.

A respective power semiconductor component 7 is arranged on twoconductor tracks 22, which power semiconductor component can be embodiedin a routine manner in the art as an individual switch, for example as aMOS-FET, or as an IGBT with a power diode connected in antiparallel,which is illustrated here. The power semiconductor components 7, moreprecisely their first contact area (700, cf. FIG. 2) of the first mainsurface (70, cf. FIG. 2), are electrically conductively connected to theconductor tracks 22 cohesively and in a manner conventional in the art,preferably by means of a pressure sintering connection 84.

The internal connections of switching device 1 are formed by means of aconnection device 3 made from a film composite having alternatelyelectrically conductive films 30, 34 and electrically insulating films32. Here the film composite has exactly two conductive films and oneinsulating film arranged therebetween. In this case, the surface of saidfilm composite 3 facing the substrate 2 forms the first main surface 300of said film composite, while the opposite surface forms the second mainsurface 340 of said film composite. Particularly the conductive films30, 34 of the connection device 3 are inherently structured and thusform conductor track sections electrically insulated from one another.Said conductor track sections connect in particular the respective powersemiconductor component 7, more precisely the contact areas thereof onthe side facing away from the substrate 2, to conductor tracks 22 of thesubstrate. In this configuration, the conductor track sections areconnected to the contact areas of the substrate 2 cohesively by means ofa pressure sintering connection (82, cf, FIG. 2).

For external electrical linking, the power electronic switching device 1has load and auxiliary terminal elements, only the load terminalelements being illustrated here. Said load terminal elements areembodied purely by way of example as metal shaped bodies 10 connectedcohesively by a contact foot to a conductor track 22 of the substrate 2,advantageously likewise by means of a pressure sintering connection.Said load terminal elements can likewise be embodied in a routine mannerin the art as contact spring 12. In principle, parts of the connectiondevice 3 itself can also be embodied as load or auxiliary terminalelements. The auxiliary terminal elements (not illustrated), such asgate or sensor terminals, are preferably likewise embodied in a routinemanner in the art.

The pressure device 5, routine in the art, has a first main surface 502facing the substrate 2 and a second main surface facing away from thesubstrate 2 and is illustrated here at a distance from the connectiondevice 3, for the sake of clarity. The pressure device 5 consists of apressure body 50 and a plurality, two being illustrated, of pressureelements 52. The pressure body 50 is embodied particularly rigidly inorder to be able to pass on pressure introduced by it homogeneously tothe pressure elements 52. The pressure elements 52 are arranged incutouts 500 of the pressure body 50, which are embodied as depressionsproceeding from a first main surface 502. They completely fill saidcutouts 500 and project from them at the first main surface 502 in thedirection of the substrate 2.

For this purpose and against the background of the thermal loads duringoperation of the switching device, the pressure body 50 consists of ahigh-temperature-resistant thermoplastic, in particular of polyphenylenesulphide. The pressure elements 52 must be able to exert a substantiallyconstant pressure during operation and in this case in particular atdifferent temperatures. For this purpose, the pressure elements 52consist of an elastomer, preferably of a silicone elastomer,particularly preferably of so-called crosslinked liquid silicone(LSR—Liquid Silicone Rubber). The ratio of lateral extent 544 tovertical extent 520 of the pressure body 52 here has a ratio of 4 to 1.

The arrangement furthermore has a heat sink 4, the surface of which iscovered with a heat-conducting layer 40, on which the power electronicswitching device 1, more precisely the substrate 2 thereof, is arranged.On account of the configuration of the arrangement according to theinvention, the heat-conducting layer 40 can have a very small thickness,which here is between 5 μm and 10 μm. In principle, the heat-conductinglayer could be completely dispensed with .This is dependent on thesurface constitution, in particular the roughness of the heat sink 4.

Alternatively, the insulation layer 20 of the substrate 2 can beembodied as an electrically insulating film that is laminated directlyonto the heat sink 4. In this case, too, the conductor tracks 22 can beembodied as planar conduction elements composed of copper. The latterthen advantageously have a thickness of 0.5 mm to 1.0 mm.

The arrangement furthermore has a pressure introducing device 6, whichis arranged above the connection device 3. By means of said pressureintroducing device 6, which is supported against the heat sink in amanner not illustrated, pressure 60 is introduced on the pressure body50. Said pressure 60 is transmitted in each case as partial pressure 62by means of the pressure elements 52 directly to a first section 344 ofthe second main surface 340 of the film composite 3. Said section 344then indirectly presses, with formation of the force-locking connection,a contact area (304, cf. FIG. 2) of the first main surface 300 onto anassigned contact area (720, cf. FIG. 2) of the second main surface 72 ofthe power semiconductor component 7. Said section 344 is arranged withinthe area 74 of the power semiconductor component 7 in projection alongthe direction of the normal N to the power semiconductor component 7.

The introduced pressure 60 furthermore presses the entire substrate 2onto the heat sink 4. The two pressure contacts, the electricallyconductive between the connection device 3 and the power semiconductorcomponent 7, and also between the substrate 2 and the heat sink 4, iseffected in each case in the direction of the normal N to the powersemiconductor component 7. Consequently, firstly, a highly efficientforce-locking and electrically conductive connection between theconnection device 3 and the power semiconductor component 7 is formed,said connection exhibiting extremely low contact resistance. Secondly,at the same time a likewise efficient, thermally conductive connectionbetween the substrate 2 and the heat sink 4 is formed, which connectionforms its most effective heat transfer precisely at that location withthe highest evolution of heat, that is to say the power semiconductorcomponent 7.

FIG. 2 shows a sectional view of a first configuration of a powerelectronic switching device 1 according to the invention, such as isbasically already illustrated in FIG. 1.

The illustration here shows the substrate 2, comprising one insulatinglayer 20 and two conductor tracks 22. On the right-hand conductor track22, a power semiconductor component 7, embodied as a power diode, isarranged and electrically conductively connected to the conductor track22 by means of a cohesive connection, here a pressure sinteringconnection 84.

The power semiconductor component 7, more precisely its contact area 720of the second main surface 72 that faces away from the substrate 2, iselectrically conductively connected to the left-hand conductor track 22by means of a connection device 3. For this purpose, the connectiondevice 3 has a first electrically conductive film 30, wherein thecontact area 304 thereof is implemented with the corresponding contactarea 720 of the power semiconductor component 7 by means of aforce-locking connection.

This force-locking connection is formed by a partial pressure 62, cf.FIG. 1, being introduced directly on a first section 344 of the secondmain surface 340 of the connection device, here of the film composite 3.The respective contact locations 304, 720 of the force-lockingconnection are preferably provided here with a gold surface, inparticular a few micrometres thin gold layer, since these have the bestcontact properties and contact resistances. Moreover, the respectivecontact locations 304, 720 of the force-locking connection have aroughness depth (Rz) of less than 5 μm, in particular of less than 2 μm,and a mean roughness (Ra) of less than 1 μm, in particular of less than0.5 μm, in each case determined in accordance with EN ISO 4287, thecontents of which are incorporated herein by reference.

The second contact area 720 of the power semiconductor component 7 iselectrically conductively connected to the left-hand conductor track 22.For this purpose, the first metal film 30 of the film composite 3extends from the contact location 304 with the power semiconductorcomponent 7 as far as a contact location 222 of the left-hand conductortrack 22. The cohesive connection there between the contact location 308of the connection device 3 and the contact location 222 of the conductortrack 22 of the substrate 2 is formed by means of a pressure sinteringconnection 82 or some other connection that is routine in the art.

The connection device 3 further has an electrically insulating film 32and a further electrically conductive film 34, which in interaction formthe further circuit-conforming internal connection of the powerelectronic switching device 1.

Moreover, the power electronic switching device 1 also comprises apreferably gel-like insulating substance 38, which is arranged in theinterspace between substrate 2, connection device 3 and powersemiconductor component 7. Said insulating substance serves for internalelectrical insulation, in particular that between the first conductivefilm 30 of the connection device 3 and the right-hand conductor track 22of the substrate 2.

FIG. 3 shows a sectional view of a second configuration of a powerelectronic switching device 1 according to the invention. Theelectrically conductive connection between the power semiconductorcomponent 7 and the connection device 3 is formed here once again bymeans of the force-locking connection described above. The cohesiveconnection of the power semiconductor component 7 to the conductor track22 of the substrate 2 is likewise formed in the manner as describedabove.

In contrast to the first configuration in accordance with FIG. 2, herethe connection device 3 has, in the contact regions with respect to thepower semiconductor component 7 and also with respect to the left-handconductor track 22, only sections of the first electrically conductivefilm 30 which are not directly connected to one another. Rather,plated-through holes 320 from the first conductive film 30 to the secondconductive film 34 through the insulating film 32 are arranged in saidsections. Consequently, the electrical connection between the left-handconductor track 22 and the power semiconductor component 7 is effectedvia the second electrically conductive film 34. Moreover, a terminalelement 12, embodied here by way of example as a spring contact element,is illustrated on the left-hand conductor track 22.

FIG. 4 shows a sectional view of a third configuration of a powerelectronic switching device 1 according to the invention, said thirdconfiguration being produced in accordance with the second methodaccording to the invention. The substrate 2 with the power semiconductorcomponent 7 is embodied here in the manner as already described withregard to FIG. 3.

An electrically insulating adhesive substance 36, preferably an adhesivebased on silicone rubber, is arranged on the substrate 2 between the twoconductor tracks 22 and in a manner overlapping the latter in edgeregions. Without application of pressure by means of the pressure device5, said adhesive substance provides for an adhesive, that is to say atleast adherent, connection between the substrate 2 in the section 228thereof and the connection device 3 in the section 348 thereof. What isessential here is that said adherent connection does not contribute tothe electrical conduction and is thus also only arranged in sections228, 348 in which no electrically conductive contact is formed betweenthe connection device 3 and the substrate 2, more precisely a conductortrack 22 or the power semiconductor component 7.

The electrically conductive connection between the power semiconductorcomponent 7 and the left-hand conductor track 22 by means of theconnection device 3 is formed here by the second electrically conductivefilm 34 rather than by the first electrically conductive film. In thiscase, in contrast to the configuration in accordance with FIG. 3, nosection of the first conductive film 30 and thus also no plated-throughhole is necessary in the region of the left-hand conductor track 22. Inthe region of the power semiconductor component 7, the configuration ofthe connection device 3 is as described with regard to FIG. 3.

The electrically conductive connection between the connection device 3and the power semiconductor component 7 and between the connectiondevice 3 and the left-hand, i.e. the assigned conductor track 22 of thesubstrate 2, is embodied as a force-locking connection. For thispurpose, a respective partial pressure 62 (cf also FIG. 1) is introducedon the respective connection by means of a respective assigned pressureelement 52 of the pressure device 5. In this case, therefore, a partialpressure 62 is exerted on a second section 346 of the second mainsurface 340 of the connection device, as a result of which a contactarea 342 of the second electrically conductive film 34 is pressed onto acontact area 222 of the left-hand conductor track 22 and is electricallyconductively connected thereto in a force-locking manner.

A major advantage of this third configuration of the power electronicswitching device 1 is that a cohesive and electrically conductiveconnection needs to be implemented here exclusively at the substratelevel, i.e. between the power semiconductor component 7 and the assignedconductor track 22. Such connections are routine in the art and arerelatively simple to produce even in the case of pressure sinteringconnections. The connection device 3 then only becomes adherent, whichis likewise simple to implement and enables a sufficient fixing of theconnection partners, that is to say of the substrate and the connectiondevice. It is only during the operation of the power electronicswitching device that the described application of pressure takes place,which here forms the force-locking electrically conductive contactbetween the connection device 3 and the power semiconductor component 7and also between the connection device 3 and the conductor track 22 ofthe substrate 2.

FIGS. 5A-5D show a plan view of a power electronic switching device 1 indifferent sectional planes. The sectional plane in accordance with FIG.5A shows two power semiconductor components 7, which are arrangedtypically, but in a manner not illustrated, on a common conductor trackof a substrate. Without restricting the generality, this involves atransistor having a central gate terminal area and emitter terminalareas bordering the latter, and a diode having a cathode terminal area.

FIG. 5B shows the first, inherently structured, electrically conductivefilm 30 of the connection device 3. This forms an electricallyconductive connection between the emitter terminal areas of thetransistor and the cathode terminal area of the diode. In this case, acutout is implemented for the gate terminal area of the transistor.

FIG. 5C shows the second inherently structured electrically conductivefilm 34 of the connection device 3. This forms an electricallyconductive connection to the gate terminal area of the transistor.

FIG. 5D shows as it were the footprint of the contact elements of thecontact device that are assigned to the power semiconductor components7, wherein only one contact element is assigned to the transistor, onaccount of the square basic shape thereof, and two contact elements areassigned to the diode, on account of the rectangular basic shapethereof. The respective footprint corresponds to those first sections344 on the second main surface 340 of the connection device 3 which arearranged in alignment with the power semiconductor components in thedirection of the normal and are projected here onto the respective powersemiconductor component. It becomes clear here that the area of thefootprint, that is to say that area which is intended for introducingpressure, covers the largest possible portion of the area of the powersemiconductor component, without going beyond said area.

Also, the inventors intend that only those claims which use the words“means for” are intended to be interpreted under 35 USC 112, sixthparagraph. Moreover, no limitations from the specification are intendedto be read into any claims, unless those limitations are expresslyincluded in the claims.

Where a specific numerical value is mentioned herein, it should beconsidered that the value may be increased or decreased by 20%, whilestill staying within the teachings of the present application, unlesssome different range is specifically mentioned. Where a specifiedlogical sense is used, the opposite logical sense is also intended to beencompassed.

Having described at least one of the preferred embodiments of thepresent invention with reference to the accompanying drawings, it willbe apparent to those skills that the invention is not limited to thoseprecise embodiments, and that various modifications and variations canbe made in the presently disclosed system without departing from thescope or spirit of the invention. Thus, it is intended that the presentdisclosure cover modifications and variations of this disclosureprovided they come within the scope of the appended claims and theirequivalents.

What is claimed is:
 1. A power electronic switching device (1),comprising: a substrate (2), comprising a connection device (3); apressure device (5); the substrate (2) has a plurality of conductortracks (22) electrically insulated from one another; a powersemiconductor component (7) with a first semiconductor main surface (70)is arranged on one of the plurality of conductor tracks (22) and iselectrically conductively connected to said one of said conductor tracks(22); the connection device (3) is embodied as a film composite; saidfilm composite includes at least one electrically conductive film (30,34) and an electrically insulating film (32) and forms a first filmcomposite main surface (300) opposite a second film composite mainsurface (340); the switching device is connected in a circuit-conformingmanner internally by means of the connection device (3) and a secondsemiconductor contact area (720) of a second semiconductor main surface(72) of the power semiconductor component (7) is connected to a firstfilm contact area (304) of the first film composite main surface (300)of the connection device (3) in a force-locking and an electricallyconductive manner; the pressure device (5) has a pressure body (50) anda pressure element (52) projecting therefrom in a direction of the powersemiconductor component (7); the pressure element (52) pressing a firstfilm section (344) of the second film composite main surface (340) ofthe film composite (3); and wherein, said first film section (344) isarranged within an area (74) of the power semiconductor component (7) ina projection along a direction that is normal (N) to the powersemi-conductor component (7).
 2. The switching device, according toclaim 1, further comprising: a second film contact area (308) of theconnection device (3) is in a connection with a second conductor contactarea (222) of one of the assigned conductor tracks (22) of the substrate(2) in one of a force-locking manner and a cohesive manner and anelectrically conductive manner.
 3. The switching device, according toclaim 2, wherein: said connection is said cohesive connection; and saidcohesive connection is selected from one of a soldering connection, anadhesive connection, and a pressure sintering connection.
 4. Theswitching device, according to claim 1, comprising: the powersemiconductor component (7) being electrically and conductivelyconnected by said first semiconductor main surface (70) to one of theconductor track (22) in at least one of a force-locking manner and acohesive manner.
 5. The switching device, according to claim 1, wherein:the pressure body (50) has at least a first cutout (500); and thepressure element (52) in said at least first cutout (500) and projectingtherefrom.
 6. The switching device, according to claim 4, wherein: theat least first cutout (500) of the pressure body (50) is a depressionextending inwardly from a first main body surface (502); and thepressure element (52) at least partially fills the cutout (500) of thepressure body (50), and projects beyond said first main body surface(502).
 7. The switching device, according to claim 5, wherein: a ratioof a lateral extent (544) of the pressure body (52) to a vertical extent(520) of the pressure body (52) is a ratio of more than 2 to
 1. 8. Theswitching device, according to claim 1, wherein: the pressure body (50)consists of a high-temperature-resistant thermoplastic; saidhigh-temperature-resistant thermoplastic includes at least apolyphenylene sulphide; and the pressure element (52) is an elastomerselected from a group consisting of a silicone elastomer and acrosslinked liquid silicone.
 9. The switching device, according to claim1, wherein: a surface area of the first film section (344) has at least20% of the area (74) of the assigned power semiconductor component (7).10. A power switching arrangement (100), comprising: an electronicswitching device (1) according to claim 1; a cooling device (4) and apressure introducing device (6); said pressure introducing device (6)introduces pressure proximately centrally on the pressure device (5) ofthe switching device (1) and is supported against the cooling device(4); and said pressure inducing device (6) is thereby connected to thecooling device (4) in a force-locking. manner.
 11. The arrangement,according to claim 10, further comprising: a heat-conducting layer (40)arranged between the substrate (2) and the cooling device (4); and saidheat-conducting layer (40) has a thickness of less than 20 μm.
 12. Thearrangement, according to claim 10, wherein: the cooling device (4) is ametallic baseplate of one of a power semiconductor module and a heatsink.
 13. A method for producing a power electronic switching device(1), comprising the steps of: A. providing a substrate (2); saidsubstrate (2) further comprising an insulation layer (20) and comprisinga plurality of conductor tracks (22) electrically insulated from oneanother; a power semiconductor component (7) arranged on one of theconductor tracks (22) and connected to said conductor tract (22) in acohesive manner; B. providing a connection device (3); said connectiondevice is a film stack embodied alternately with two electricallyconductive inherently structured films (30, 34) spaced by anelectrically insulating film (32); C. arranging an adhesive substance(36) on one of the substrate (2) and the connection device (3) atadhesive sections which do not serve for electrically conductiveconnection between the connection device (3) and the substrate (2); D.arranging and adhesively connecting the connection device (3) to thesubstrate (2) by means of the adhesive substance (36); and E.introducing a pressure on the connection device (3) with a pressuredevice (5) and a pressure introducing device (6) and providing aforce-locking electrically conductive connection between the connectiondevice (3) and the assigned power semiconductor component (7).
 14. Themethod, according to claim 13, wherein: a force-locking electricallyconductive connection is formed between the connection device (3) andthe assigned conductor track (22).